(China (Mainland))
Product Summary
The FLM5964-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
Parametrics
FLM5964-8F absolute maximum ratings: (1)Drain-Source Voltage: 15 V; (2)Gate-Source Voltage: -5 V; (3)Total Power Dissipation: 42.8 W at TC=25 ℃; (4)Storage Temperature: -65 to +175 ℃; (5)Channel Temperature: 175 ℃.
Features
FLM5964-8F features: (1)High Output Power: P1dB = 39.5dBm (Typ.); (2)High Gain: G1dB = 10.0dB (Typ.); (3)High PAE: ηadd = 37% (Typ.); (4)Low IM3 = -46dBc@Po = 28.5dBm; (5)Broad Band: 5.9 ~ 6.4GHz; (6)Impedance Matched Zin/Zout = 50Ω; (7)Hermetically Sealed Package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FLM5964-8F |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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FLM5359-45F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-12F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-18F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-25F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-35F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-45F |
Other |
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Data Sheet |
Negotiable |
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