(China (Mainland))
Product Summary
The FLM5964-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.
Parametrics
FLM5964-4F absolute maximum ratings: (1)Drain-Source Voltage, VDS: 15V; (2)Gate-Source Voltage, VGS: -5V; (3)Total Power Dissipation, PT: 25W at Tc=25℃; (4)Storage Temperature, Tstg: -65 to 175℃; (5)Channel Temperature, Tch: 175℃.
Features
FLM5964-4F features: (1)High Output Power: P1dB = 36.5dBm (Typ.); (2)High Gain: G1dB =10.0dB (Typ.); (3)High PAE: ηadd = 37% (Typ.); (4)Low IM3 = -46dBc@Po = 25.5dBm; (5)Broad Band: 5.9 ~ 6.4GHz; (6)Impedance Matched Zin/Zout = 50?Ω; (7)Hermetically Sealed Package.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FLM5964-4F |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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FLM5359-45F |
Other |
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Negotiable |
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FLM5964-12F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-18F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-25F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-35F |
Other |
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Data Sheet |
Negotiable |
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FLM5964-45F |
Other |
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Data Sheet |
Negotiable |
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